Impurity Conduction in Silicon Carbide

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Krieger M, Semmelroth K, Weber HB, Pensl G, Rambach M, Frey L
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2007
Band: 556-557
Seitenbereich: 364
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts of highly doped samples (NA≥ 7.2×10 17 cm-3) reveal two series of conductance peaks, which cause two different slopes of the Arrhenius plot. The steep slope is attributed to the Al acceptor, while the flatter one - obtained from the low temperature peaks - is attributed to the activation energy ε3 of nearest neighbor hopping. We propose a model, which explains the unexpected sharpness of the low temperature conductance peaks and the disappearance of these peaks for low acceptor concentrations. The model is verified by simulation, and the AS results are compared with corresponding results obtained from resistivity measurements taken on 4H- and the identical 6HSiC samples.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Zitierweisen

APA:
Krieger, M., Semmelroth, K., Weber, H.B., Pensl, G., Rambach, M., & Frey, L. (2007). Impurity Conduction in Silicon Carbide. Materials Science Forum, 556-557, 364.

MLA:
Krieger, Michael, et al. "Impurity Conduction in Silicon Carbide." Materials Science Forum 556-557 (2007): 364.

BibTeX: 

Zuletzt aktualisiert 2019-25-02 um 07:09