Prof. Dr.-Ing. Peter Wellmann



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)



Project lead

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)

MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)

(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)


Publications (Download BibTeX)

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Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23(50), 12275-12282. https://dx.doi.org/10.1002/chem.201701081
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2017). Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates. Journal of Materials Science: Materials in Electronics, 1-9. https://dx.doi.org/10.1007/s10854-017-6467-8
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. In Proceedings of the 5th international workshop on LED and Solar Applications. Lyngby, DK.
Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. Physica Status Solidi (A) Applications and Materials Science. https://dx.doi.org/10.1002/pssa.201600429
Yakimova, R., Ivanov, I.G., Vines, L., Linnarsson, M.K., Gällström, A., Giannazzo, F.,... Jokubavicius, V. (2017). Growth, defects and doping of 3C-SiC on hexagonal polytypes. ECS Journal of Solid State Science and Technology, 6(10), P741-P745. https://dx.doi.org/10.1149/2.0281710jss
Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773. https://dx.doi.org/10.5185/amp.2017/415
Wei, Y., Künecke, U., Jokubavicius, V., Syväjärvi, M., Wellmann, P., & Ou, H. (2017). Low Temperature Photoluminescence of 6H fluorescent SiC. In Proceedings of the E-MRS Spring Meeting 2017. Strasbourg, FR.
Wellmann, P. (2017). Materials-Related Solutions for Industry. In Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (Eds.), Materials Innovation for the global circular economy and sustainable society.
Wellmann, P. (2017). Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Zeitschrift fur Anorganische und Allgemeine Chemie, 643(21), 1312-1322. https://dx.doi.org/10.1002/zaac.201700270

Last updated on 2016-05-05 at 05:35