Prof. Dr.-Ing. Peter Wellmann



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)



Project lead

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)

MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)

(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)


Publications (Download BibTeX)

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Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543. https://dx.doi.org/10.5185/amp.2018/1414
Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4).
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21. https://dx.doi.org/10.1088/1361-6641/aad831
Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201800019
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials. https://dx.doi.org/10.1007/s11664-018-6636-4
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15
Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23(50), 12275-12282. https://dx.doi.org/10.1002/chem.201701081
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2017). Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates. Journal of Materials Science: Materials in Electronics, 1-9. https://dx.doi.org/10.1007/s10854-017-6467-8
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. In Proceedings of the 5th international workshop on LED and Solar Applications. Lyngby, DK.

Last updated on 2016-05-05 at 05:35