Prof. Dr.-Ing. Peter Wellmann



Organisationseinheit


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)



Projektleitung

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20.12.2018 - 31.05.2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01.01.2018 - 31.12.2020)

MYCIGS: Energieertragsoptimierte Cu(In,Ga)(S,Se)2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01.10.2017 - 30.09.2020)

(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01.01.2017 - 31.12.2020)

Analyse der Wachstumskinetik während der Hochtemperatur-Kristallzüchtung von SiC unter Anwendung der Computertomographie zur in-situ 3D Visualisierung der Wachstumsphasengrenze
Prof. Dr.-Ing. Peter Wellmann
(01.05.2016 - 30.04.2019)


Publikationen (Download BibTeX)

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Salamon, M., Arzig, M., Uhlmann, N., & Wellmann, P. (2019). Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography. Materials Science Forum, 963, 5-9. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.5
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028
Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13). https://dx.doi.org/10.3390/ma12132207
Schöler, M., Brecht, C., & Wellmann, P. (2019). Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide. Materials, 12(15). https://dx.doi.org/10.3390/ma12152487
Schöler, M., Lederer, M., & Wellmann, P. (2019). Deep electronic levels in n-type and p-type 3C-SiC. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 297-300). Birmingham, GB: Trans Tech Publications Ltd.
Hassanien, A.E., Abdelhaleem, S., Ahmad, R., Schuster, M., Moustafa, S.H., Distaso, M.,... Wellmann, P. (2019). Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique. Journal of Nanoelectronics and Optoelectronics, 14(10), 1394-1400. https://dx.doi.org/10.1166/jno.2019.2633
Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13). https://dx.doi.org/10.3390/ma12132179
Steiner, J., Arzig, M., Denisov, A., & Wellmann, P. (2019). Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201900121
Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9). https://dx.doi.org/10.1007/s00340-019-7279-8
Arzig, M., Steiner, J., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals. Materials, 12(16). https://dx.doi.org/10.3390/ma12162591

Zuletzt aktualisiert 2016-05-05 um 05:35