Prof. Dr.-Ing. Peter Wellmann


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Project lead

CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)

(FOR 1600: Chemie und Technologie der Ammonothermal-Synthese von Nitriden):
In situ Visualisierung des ammonothermalen Kristallisationsprozesses mittels Röntgenmesstechnik
Prof. Dr.-Ing. Peter Wellmann
(01/07/2011 - 30/07/2014)

INNER: Im Fokus des Projektes NORLED steht die Herstellung einer neuen Technologie für energieeffiziente, weiße Leuchtdioden auf Basis fluoreszierenden Siliziumkarbids, die im Vgl. zum Stand der Technik umweltfreundlicher und kostengünstiger ist
Prof. Dr.-Ing. Peter Wellmann
(01/05/2010 - 30/04/2012)

Prof. Dr. Rainer Hock; Prof. Dr. Erdmann Spiecker; Prof. Dr.-Ing. Peter Wellmann
(01/02/2010 - 31/01/2013)

Publications (Download BibTeX)

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Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology.
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68.
Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4).
Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23(50), 12275-12282.
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778.
Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773.
Schimmel, S., Koch, M., Macher, P., Kimmel, A.-C., Steigerwald, T., Alt, N.,... Wellmann, P. (2017). Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers. Journal of Crystal Growth, 479, 59-66.
Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. Physica Status Solidi (A) Applications and Materials Science.
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. In Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis (Eds.), Materials Science Forum, Silicon Carbide and Related Materials 2016, Volume 897 (pp. 15-18). Halkidiki, GR: Trans Tech Publications Ltd.
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162.

Last updated on 2016-05-05 at 05:35