Microelectronics Reliability

Journal Abbreviation: MICROELECTRON RELIAB
ISSN: 0026-2714
Publisher: Elsevier


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Volume: 91, Pages range: 183-187
Normalized differential conductance to study current conduction mechanisms in MOS structures (2018)
Nouibat TH, Messai Z, Chikouch D, et al.

Volume: 60, Pages range: 93-100
Pulse Plated Silver Metallization on Porosified Low Temperature Co-fired Ceramics for High Frequency Applications (2016)
Steinhäußer F, Talai A, Sandulache G, et al.

Journal issue: 7, Volume: 55, Pages range: 1028-1034
Current conduction mechanism of MIS devices using multidimensional minimization system program (2015)
Rouag, N, Ouennoughi Z, et al.

Volume: 54, Pages range: 1735-1740
Analytical stress characterization after different chip separation methods (2014)
Fügl M, Mackh G, Meissner E, et al.

Journal issue: 6-7, Volume: 54, Pages range: 1066-1074
Resilience Articulation Point (RAP): Cross-layer Dependability Modeling for Nanometer System-on-Chip Resilience (2014)
Herkersdorf A, Aliee H, Engel M, et al.

Journal issue: 12, Volume: 53, Pages range: 1841-1847
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC (2013)
Ouennoughi Z, Strenger C, Bourouba F, et al.

Journal issue: 8, Volume: 51, Pages range: 1346-1350
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications (2011)
Le-Huu M, Schmitt H, Noll S, et al.

Journal issue: 12, Volume: 51, Pages range: 2081-2085
Leakage current and defect characterization of p+n-source/drain diodes (2011)
Roll G, Goldbach M, Frey L

Last updated on 2015-29-05 at 16:46