Microelectronics Reliability

Journal Abbreviation: MICROELECTRON RELIAB
ISSN: 0026-2714
Publisher: Elsevier

Publications (23)

close-button

Types of publications

Journal article
Unpublished / Preprint

Publication year

From
To

Abstract

Testing and simulation of lifetime for wire bond interconnections with varying bond foot angle (2024) Sippel M, Tan YF, Schmidt R, Botazzoli P, Sprenger M, Franke J Journal article Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermography (2023) Käsbauer M, Dreher P, Sippel M, Schmidt R Journal article Improving the reliability of power modules through layered diffusion solder interconnects – Comparative study based on experiments and FE-simulation (2023) Ottinger B, Mathew A, König S, Albrecht J, Sprenger M, Müller L, Goth C, Franke J Journal article Influence of SiC chip thickness on the power cycling capability of power electronics assemblies – A comprehensive numerical study (2023) Zhao D, Letz S, Leib J, Schletz A Journal article Impact of THT-hole dimensioning on manufacturability in selective wave soldering (2022) Seidel R, Ockel M, Franke J, Kästle C Journal article Experimental identification and prioritization of design and process parameters on hole fill in mini wave soldering (2022) Seidel R, Ahrens T, Friedrich J, Reinhardt A, Franke J Journal article Automated quantitative analysis of void morphology evolution in Ag[sbnd]Ag direct bonding interface after accelerated aging (2021) Yu Z, Xu T, Letz S, Bayer CF, Schletz A, März M Journal article Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test (2020) Zhao D, Letz S, Yu Z, Schletz A, März M Journal article, Original article A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices (2019) Schriefer T, Hofmann M Journal article Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations (2018) Kamrani H, Yu F, Frank K, Strempel K, Fatahilah MF, Wasisto HS, Roemer F, et al. Journal article
1 2 3