Close space physical vapor transport growth of SiC, doped layers and thin crystals

Strüber S, Tana L, Schneider O, Grazzi C, Wagner T, Wellmann P (2026)

Publication Type: Journal article

Publication year: 2026

Journal

Book Volume: 677

Article Number: 128474

DOI: 10.1016/j.jcrysgro.2025.128474

Abstract

Close space physical vapor transport growth was applied to prepare SiC layer stacks for application in photonic applications. Due to flexible setting of the axial T-temperature gradient while keeping a low radial T-gradient, growth conditions for various SiC polytypes like 4H-SiC, 6H-SiC and also 3C-SiC are possible. Using 4° off-axis 4H-SiC seed wafers a high polytype stability of 25 to 150 µm thick layers grown on C-face as well as on Si-face substrates was observed. It is found that the ballistic growth regime enables a high efficiency of the dopant transfer, which enables highly p-type doped layer deposition. The found results indicate that CS-PVT can be used to replace epitaxial growth of layers for power electronic applications.

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How to cite

APA:

Strüber, S., Tana, L., Schneider, O., Grazzi, C., Wagner, T., & Wellmann, P. (2026). Close space physical vapor transport growth of SiC, doped layers and thin crystals. Journal of Crystal Growth, 677. https://doi.org/10.1016/j.jcrysgro.2025.128474

MLA:

Strüber, Sven, et al. "Close space physical vapor transport growth of SiC, doped layers and thin crystals." Journal of Crystal Growth 677 (2026).

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