Rosskopf A, Cheng X, Straub C, Tenbrinck D (2025)
Publication Type: Conference contribution
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
ISBN: 9798331548834
DOI: 10.1109/SISPAD66650.2025.11186115
The combination of physical modeling and machine learning, known as Scientific Machine Learning (SciML), is enabling a new generation of simulation methodologies. In this work, we demonstrate the potential of SciML for simulating silicide formation in Ni-SiC systems, a process highly relevant to TCAD and device engineering. Four neural network architectures - standard MLPs, enhanced mMLPs with residual connections, interpretable Kolmogorov-Arnold Networks (KANs), and Chebyshev KANs (cKANs) - are benchmarked, each trained solely on the governing physical laws. All models tested achieve accurate results and enable rapid evaluation, providing large speedups over traditional solvers. Among these, the mMLP yields the best accuracy. These findings underscore the strong potential of SciML for efficient and accurate TCAD simulations, paving the way for scalable, data-integrated modeling of complex material interactions in semiconductor technology.
APA:
Rosskopf, A., Cheng, X., Straub, C., & Tenbrinck, D. (2025). Scientific Machine Learning (SciML) - How the Fusion of AI and Physics is Giving Rise to Promising Simulation Methodologies. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Grenoble, FRA, FR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Rosskopf, Andreas, et al. "Scientific Machine Learning (SciML) - How the Fusion of AI and Physics is Giving Rise to Promising Simulation Methodologies." Proceedings of the 30th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2025, Grenoble, FRA Institute of Electrical and Electronics Engineers Inc., 2025.
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