Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation

Jayaprakash H, Csato C, Kato M, Tong L, Krippendorf F, Rueb M (2025)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2025

Journal

Solid State Phenomena Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Series: Solid State Phenomena

Book Volume: 375

Pages Range: 13-20

DOI: 10.4028/p-kLR0jq

Abstract

Bipolar degradation poses a significant concern for the reliability of SiC bipolar power devices. The basic cause for bipolar degradation is expansion of Shockley Stacking Faults SSFs. These glide planes can be pinned and prevented from expansion. This study involves 19 MeV Energy Filtered Ion Implantation of Nitrogen (i.e. resulting in an energy spectrum ranging from 0 MeV to nearly 19 MeV in one shot) to explore the pinning effect of Nitrogen ions that suppresses recombination glide, which minimizes SSF growth, while providing precise doping of the entire drift region by the same Nitrogen implantation. All is performed in one single step. This procedure paves the path to immobilize any nucleation sites in the entire drift layer, this way enhancing the reliability and facilitating mass production of SiC power devices. This study employs UV illumination as an optical stressing method to create e-/h+ pair, which subsequently induce 1SSF expansion. Both, UV induced 1SSF expansion and pining were observed by photoluminescence. Carrier lifetime measurements were employed for understanding the mechanism of pinning defects.

Involved external institutions

mi2-factory GmbH DE Germany (DE) Nagoya Institute of Technology / 名古屋工業大学 Nagoya Kōgyō Daigaku JP Japan (JP)

How to cite

APA:

Jayaprakash, H., Csato, C., Kato, M., Tong, L., Krippendorf, F., & Rueb, M. (2025). Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation. In (pp. 13-20). Trans Tech Publications Ltd.

MLA:

Jayaprakash, Hitesh, et al. "Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation." Trans Tech Publications Ltd, 2025. 13-20.

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