Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
Jayaprakash H, Csato C, Koch R, Krippendorf F, Rueb M (2025)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2025
Journal
Publisher: Trans Tech Publications Ltd
Series: Materials Science Forum
Book Volume: 1156
Pages Range: 17-26
DOI: 10.4028/p-tzYpX7
Abstract
The growing demand for 4H-SiC substrates in power device fabrication has encouraged the development of engineered substrates to reduce costs and facilitate wafer re-usability for effective material utilization. This work presents a novel approach for manufacturing SiC power devices is to exfoliate the required drift layer thickness from ultra-high-quality Semi Insulating (SI) 4H-SiC material, bond it to a conductive SiC substrate and thus obtain the non-epitaxial engineered substrate. Energy-filtered Ion Implantation (EFII) technology enables custom doping profiles, precise control of doping concentration, and potentially robust material properties compared to as-grown epitaxial layers in the bonded layer. Key steps to exfoliate a 4|im thick SiC layer from semi-insulating substrates and bond it to low-cost, highly conductive mono-crystalline SiC are demonstrated. This paper mainly focuses on the physical characterization of demonstrated samples.
Involved external institutions
mi2-factory GmbH
Germany (DE)
Ernst-Abbe-Hochschule Jena (FH/EAH Jena) / Ernst Abbe University of Applied Sciences Jena
Germany (DE)
Germany (DE)
Ernst-Abbe-Hochschule Jena (FH/EAH Jena) / Ernst Abbe University of Applied Sciences Jena
Germany (DE)
How to cite
APA:
Jayaprakash, H., Csato, C., Koch, R., Krippendorf, F., & Rueb, M. (2025). Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates. In (pp. 17-26). Trans Tech Publications Ltd.
MLA:
Jayaprakash, Hitesh, et al. "Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates." Trans Tech Publications Ltd, 2025. 17-26.
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