A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker
Hartmann A, Boettcher N (2025)
Publication Type: Conference contribution
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 1669-1673
Conference Proceedings Title: 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings
Event location: Opatija
ISBN: 9798331535971
DOI: 10.1109/MIPRO65660.2025.11131705
Abstract
This paper provides a thorough design study of a two-pole solid-state circuit breaker (SSCB) device for 900 V DC applications supported by quasi-static two-dimensional TCAD simulations. Building on the work of Boettcher et al. using 4H-SiC JFET technology with monolithic integration of an n-channel JFET (nJFET) and a p-channel JFET (pJFET), the proposed design replaces the horizontal nJFET with a vertical structure [1]-[3]. This change eliminates the need for a second epitaxial layer and reduces the number of ion implantation steps from six to three, thereby simplifying the manufacturing process. Numerical TCAD simulations reveal that the novel SSCB design enables independent tuning of threshold and breakdown voltage. In the pJFET, adjustments in channel depth and doping concentration allow the blocking voltage window to be enhanced from 450 V to over 800 V, while maintaining a breakdown voltage of approx. 900 V. These findings indicate that the proposed SSCB design offers improved performance and fabrication efficiency for high voltage DC applications.
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Germany (DE)How to cite
APA:
Hartmann, A., & Boettcher, N. (2025). A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker. In Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Eds.), 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings (pp. 1669-1673). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..
MLA:
Hartmann, A., and N. Boettcher. "A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker." Proceedings of the 48th MIPRO ICT and Electronics Convention, MIPRO 2025, Opatija Ed. Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak, Institute of Electrical and Electronics Engineers Inc., 2025. 1669-1673.
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