Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes
Schwemmer B, Dick J, May A, Schulze J (2025)
Publication Type: Conference contribution
Publication year: 2025
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 1680-1684
Conference Proceedings Title: 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings
Event location: Opatija
ISBN: 9798331535971
DOI: 10.1109/MIPRO65660.2025.11131817
Abstract
With lateral 4H-SiC gated pin-diodes, the tunneling behavior at the interface of a highly p-type doped anode and a gate-induced n-channel within the i-region can be controlled via the reverse voltage and the gate voltage. In this paper, the output characteristic is modelled empirically based on measurements of fabricated devices. The model used in this work is based on Zener-tunneling through a triangular barrier and the maximum electric field in a pnjunction assuming the depletion approximation. The influence on the tunneling current of varying reverse voltages is weaker than predicted by the employed theory, but an empirically updated model, where the expression for the electric field is altered, can fit the characteristic well.
Authors with CRIS profile
Jan Dick
Lehrstuhl für Elektronische Bauelemente
Jörg Schulze
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Schwemmer, B., Dick, J., May, A., & Schulze, J. (2025). Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes. In Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Eds.), 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings (pp. 1680-1684). Opatija, HR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Schwemmer, B., et al. "Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes." Proceedings of the 48th MIPRO ICT and Electronics Convention, MIPRO 2025, Opatija Ed. Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak, Institute of Electrical and Electronics Engineers Inc., 2025. 1680-1684.
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