Performance Investigation of 4H-SiC PIN Photodiodes With Dual Emitter Designs for Enhanced UV-C Detection

Schraml MW, Rommel M, Papathanasiou N, May A, Erlbacher T, Schulze J (2025)

Publication Type: Journal article

Publication year: 2025

Journal

IEEE Sensors Letters IEEE

DOI: 10.1109/LSENS.2025.3608967

Abstract

We present a comprehensive analysis of various dual emitter (DuE) designs for 4H-SiC PIN photodiodes, which incorporate heavily doped p regions within a shallow p- emitter. The p regions act as low-resistance pathways, facilitating efficient transport of photogenerated carriers to the ohmic contacts. Moreover, the lateral electric field established at the p/p junction promotes effective separation of charge carriers generated proximate to the surface. By systematically varying the p path widths and spacings, we analyze the impact of different design geometries on the photodiode sensitivities and investigate the carrier collection mechanisms. Sensitivity response measurements at 210 and 280 nm demonstrate that DuE designs significantly enhance UV-C sensitivity while maintaining high responsivity in the UV-A and UV-B ranges. The best performing design investigated achieves a median sensitivity of 33.4 mA/W at 210 nm, representing a substantial improvement over reference designs.

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) sglux GmbH DE Germany (DE) Nexperia NL Netherlands (NL)

How to cite

APA:

Schraml, M.W., Rommel, M., Papathanasiou, N., May, A., Erlbacher, T., & Schulze, J. (2025). Performance Investigation of 4H-SiC PIN Photodiodes With Dual Emitter Designs for Enhanced UV-C Detection. IEEE Sensors Letters. https://doi.org/10.1109/LSENS.2025.3608967

MLA:

Schraml, Michael W., et al. "Performance Investigation of 4H-SiC PIN Photodiodes With Dual Emitter Designs for Enhanced UV-C Detection." IEEE Sensors Letters (2025).

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