A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C

May A, Rommel M, Baier L, Schraml M, Dick J, Jank MP, Schulze J (2024)

Publication Type: Conference contribution

Publication year: 2024

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2024 Smart Systems Integration Conference and Exhibition, SSI 2024

Event location: Hamburg DE

ISBN: 9798350388770

DOI: 10.1109/SSI63222.2024.10740550

Abstract

In order to provide an option for fabrication of high temperature sensing and circuit solutions, an accessible 4H-SiC high temperature CMOS technology was developed. A detailed overview of the fabrication process is given, with options for lateral power transistor integration, threshold voltage manipulation, optimization of interface state density, dedicated p-type ohmic contacts and two high temperature metallization layers. To prove high temperature device operation capability, device characteristics above 500 °C are presented. Examples include an inverter as a basic logic building block and a lateral power transistor with a blocking voltage of over 700 V. Finally, lateral integrated UV photodiodes based on a p-n junction are presented as a sensor application example. In collaboration with different partners, more complex integrated circuits and smart sensing solutions have also been realized and demonstrated previously, highlighting the possibilities if this technology.

Authors with CRIS profile

Jan Dick Lehrstuhl für Elektronische Bauelemente Jörg Schulze Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

May, A., Rommel, M., Baier, L., Schraml, M., Dick, J., Jank, M.P., & Schulze, J. (2024). A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C. In 2024 Smart Systems Integration Conference and Exhibition, SSI 2024. Hamburg, DE: Institute of Electrical and Electronics Engineers Inc..

MLA:

May, Alexander, et al. "A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C." Proceedings of the 2024 Smart Systems Integration Conference and Exhibition, SSI 2024, Hamburg Institute of Electrical and Electronics Engineers Inc., 2024.

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