4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
Schraml M, Papathanasiou N, May A, Rommel M, Erlbacher T (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: 2023 IEEE Photonics Conference, IPC 2023 - Proceedings
Event location: Orlando, FL, USA
ISBN: 9798350347227
DOI: 10.1109/IPC57732.2023.10360797
Abstract
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p- and p+ regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.
Authors with CRIS profile
Involved external institutions
sglux GmbH
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Schraml, M., Papathanasiou, N., May, A., Rommel, M., & Erlbacher, T. (2023). 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design. In 2023 IEEE Photonics Conference, IPC 2023 - Proceedings. Orlando, FL, USA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Schraml, M., et al. "4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design." Proceedings of the 2023 IEEE Photonics Conference, IPC 2023, Orlando, FL, USA Institute of Electrical and Electronics Engineers Inc., 2023.
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