Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Garbe V, Seidel S, Schmid A, Bläß U, Meissner E, Heitmann J (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 123

Article Number: 203506

Journal Issue: 20

DOI: 10.1063/5.0171168

Abstract

We report on the electrical and microstructural characterization of an Au-free V/Al/Ti/TiN ohmic contact for AlGaN/GaN heterostructures. Ultra-low contact resistance and specific contact resistivity of Rc < 0.1 Ω mm and ρc < 2.4 × 10⁻⁷ Ω cm² have been achieved with very low RMS surface roughness. This was accomplished at a comparably low annealing temperature of 800 °C and without applying any contact recess, regrowth, or implantation process. High electron mobility transistors were fabricated and a comparison of the electrical performance with state-of-the-art Ti/Al/Ti/TiN and Ti/Al/Ni/Au contacts was made. The contact formation mechanism is discussed on the basis of microstructural features.

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM) Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Technische Universität Bergakademie Freiberg

Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Garbe, V., Seidel, S., Schmid, A., Bläß, U., Meissner, E., & Heitmann, J. (2023). Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs. Applied Physics Letters, 123(20). https://doi.org/10.1063/5.0171168

MLA:

Garbe, Valentin, et al. "Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs." Applied Physics Letters 123.20 (2023).

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