Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
Jeddi H, Witzigmann B, Adham K, Hrachowina L, Borgstrom MT, Pettersson H (2023)
Publication Type: Journal article
Publication year: 2023
Journal
DOI: 10.1021/acsphotonics.2c02024
Abstract
High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 µW) @ V
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Sweden (SE)How to cite
APA:
Jeddi, H., Witzigmann, B., Adham, K., Hrachowina, L., Borgstrom, M.T., & Pettersson, H. (2023). Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product. ACS Photonics. https://doi.org/10.1021/acsphotonics.2c02024
MLA:
Jeddi, Hossein, et al. "Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product." ACS Photonics (2023).
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