Electrical switching of perpendicular magnetization in a single ferromagnetic layer

Liu L, Yu J, Gonzalez-Hernandez R, Li C, Deng J, Lin W, Zhou C, Zhou T, Zhou J, Wang H, Guo R, Yoong HY, Chow GM, Han X, Dupe B, Zelezny J, Sinova J, Chen J (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Physical Review B American Physical Society

Book Volume: 101

Journal Issue: 22

DOI: 10.1103/PhysRevB.101.220402

Abstract

We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6-to 60-nm epitaxial FePt thin films with a L10 phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and the composition gradient is observed. This Rapid Communication introduces a platform to engineer large SOTs for lower-power spintronics.

Involved external institutions

National University of Singapore (NUS) SG Singapore (SG) Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Academy of Sciences of the Czech Republic (ASCR) / Akademie věd České republiky (AVČR) CZ Czech Republic (CZ) Chinese Academy of Sciences (CAS) / 中国科学院 CN China (CN)

How to cite

APA:

Liu, L., Yu, J., Gonzalez-Hernandez, R., Li, C., Deng, J., Lin, W.,... Chen, J. (2020). Electrical switching of perpendicular magnetization in a single ferromagnetic layer. Physical Review B, 101(22). https://doi.org/10.1103/PhysRevB.101.220402

MLA:

Liu, Liang, et al. "Electrical switching of perpendicular magnetization in a single ferromagnetic layer." Physical Review B 101.22 (2020).

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