Rapid Scan In-Situ FT-IR Curing Studies of Low-Temperature Cure Thin Film Polymer Dielectrics in Solid State

Windrich F, Malanin M, Eichhorn KJ, Voit B (2016)

Publication Type: Conference contribution

Publication year: 2016

Journal

Proceedings - Electronic Components and Technology Conference Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2016-August

Pages Range: 1698-1706

Conference Proceedings Title: Proceedings - Electronic Components and Technology Conference

Event location: Las Vegas, NV, USA

ISBN: 9781509012039

DOI: 10.1109/ECTC.2016.9

Abstract

Rapid scan in-situ Fourier Transform InfraredSpectroscopy (FT-IR) was used to characterize the cureprocess of two common low-Temperature cure thin filmpolymer materials for wafer-level packaging applications. Beside a discussion of the spectral changes during the curereaction, aspects of quantification the degree of cure will beshown. First, a photosensitive low-Temperature cure ester-Typepolyimide precursor was investigated. As this material is anegative working photosensitive polyimide precursor, theimpact of the photo-crosslinking on the imidization rate will bediscussed in comparison to unexposed films. It will be shown, that at certain temperature / time conditions the exposure doseshould be carefully adjusted to yield fully imidized films withminimized cure temperatures. Second, the thermosetting process of a low-k polymer dielectricbased on divinyl siloxane bis-benzocyclobutene (DVS bis-BCB) was studied. Due to the chemical nature of the DVS bis-BCBresin a highly crosslinked network is formed during the cureprocess. Especially above 80% degree of cure at temperaturesbelow 210°C a significant reduction of the reaction rate wasmeasured. A two step cure process was developed, which canminimize the process time at elevated temperatures and yield arather high degree of conversion in a reasonable process time. Both polymer cure reactions are characterized by achemically-controlled and a diffusion controlled region withsignificant different reaction rates. Based on theaforementioned results a time, temperature and conversiondependent kinetic / diffusion model was used to describe theexperimental data quantitatively. This model allowscalculating very precisely the conversion in dependence onboth, temperature and time, which will help to optimize thecure process for the two thin film polymers with respect tothermal budget and / or process time. Therefore this paper shows a method, which will helpcomparing different thin film polymer formulations regardingcure kinetics. Modeling of the data allows optimizing theprocess conditions to meet the temperature requirements in thearea of wafer-level packaging and 3D integration.

Involved external institutions

Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM DE Germany (DE) Leibniz-Institut für Polymerforschung Dresden e. V. DE Germany (DE)

How to cite

APA:

Windrich, F., Malanin, M., Eichhorn, K.J., & Voit, B. (2016). Rapid Scan In-Situ FT-IR Curing Studies of Low-Temperature Cure Thin Film Polymer Dielectrics in Solid State. In Proceedings - Electronic Components and Technology Conference (pp. 1698-1706). Las Vegas, NV, USA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Windrich, Frank, et al. "Rapid Scan In-Situ FT-IR Curing Studies of Low-Temperature Cure Thin Film Polymer Dielectrics in Solid State." Proceedings of the 66th IEEE Electronic Components and Technology Conference, ECTC 2016, Las Vegas, NV, USA Institute of Electrical and Electronics Engineers Inc., 2016. 1698-1706.

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