Pai AP, Reiter T, März M (2016)
Publication Type: Conference contribution
Publication year: 2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 1315-1323
Conference Proceedings Title: PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ISBN: 9783800741861
In this paper, a new behavioural model is proposed for calculating power losses in power semiconductor switches. In contrast to models existing in literature which mostly model losses only in terms of Ic/f, Vdc and Tj, this paper also takes into account Rg and Vge which heavily affect the losses but are generally neglected. Moreover, the model also calculates losses as a function of the chip area per switch, which makes this model ideal for calculating the optimum chip area for a given application. The accuracy of this model is experimentally demonstrated on a HybridPACK Drive FS820R08A6P2 power module from Infineon, and the model is found to offer significantly better accuracy compared to the existing models.
APA:
Pai, A.P., Reiter, T., & März, M. (2016). A new behavioral model for accurate loss calculations in power semiconductors. In PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1315-1323). Nuremberg, DE: Institute of Electrical and Electronics Engineers Inc..
MLA:
Pai, Ajay Poonjal, Tomas Reiter, and Martin März. "A new behavioral model for accurate loss calculations in power semiconductors." Proceedings of the 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016, Nuremberg Institute of Electrical and Electronics Engineers Inc., 2016. 1315-1323.
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