Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs

Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M (2018)

Publication Type: Conference contribution

Publication year: 2018

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 924 MSF

Pages Range: 277-280

Conference Proceedings Title: Materials Science Forum

Event location: Columbia, WA, USA

ISBN: 9783035711455

DOI: 10.4028/www.scientific.net/MSF.924.277

Abstract

Current-voltage characterization and thermal dielectric relaxation current (TDRC) measurements are carried out on 4H silicon carbide (SiC) n-channel MOSFETs processed with different post oxidation anneals (POAs) in O2, N2O, and NO atmospheres at high temperature. In all samples we observe a distinct peak at a temperature of 70 K in the TDRC spectra due to a defect close to the conduction band of 4H-SiC having a high density of states (>1013 cm-2eV-1). We show that this defect is related to the degradation of the device performance such as the MOSFET conductivity. Comparing the different POAs, NO strongly reduces the density of states close to the conduction band and thus increases the amount of free channel electrons. Based on TDRC measurements we want to suggest a method for more accurate estimation of the true channel mobility accounting for the reduced channel electron density due to trapping.

Authors with CRIS profile

Heiko Weber Chair of Applied Physics (LAP) Michael Krieger Chair of Applied Physics (LAP)

Involved external institutions

Kompetenzzentrum Automobil- und Industrie-Elektronik GmbH AT Austria (AT) Infineon Technologies Austria AG AT Austria (AT)

How to cite

APA:

Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs. In Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis (Eds.), Materials Science Forum (pp. 277-280). Columbia, WA, USA: Trans Tech Publications Ltd.

MLA:

Rasinger, Fabian, et al. "Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, WA, USA Ed. Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis, Trans Tech Publications Ltd, 2018. 277-280.

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