Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain

Rühl M, Lehmeyer J, Nagy R, Weißer M, Bockstedte M, Krieger M, Weber HB (2021)

Publication Type: Journal article, Letter

Publication year: 2021

Journal

New Journal of Physics Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft

Book Volume: 23

Article Number: 073002

URI: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e

DOI: 10.1088/1367-2630/abfb3e

Open Access Link: https://doi.org/10.1088/1367-2630/abfb3e

Authors with CRIS profile

Maximilian Rühl Chair of Applied Physics (LAP) Johannes Lehmeyer Chair of Applied Physics (LAP) Roland Nagy Juniorprofessur für Elektronische Bauelemente Matthias Weißer Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Michael Krieger Chair of Applied Physics (LAP) Heiko Weber Chair of Applied Physics (LAP)

Additional Organisation(s)

Chair of Applied Physics (LAP) Lehrstuhl für Elektronische Bauelemente Sonderforschungsbereich/Transregio 306/1: Quantenkooperativität von Licht und Materie - QuCoLiMa

Related research project(s)

Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03) TRR 306: Quantenkooperativität von Licht und Materie – QuCoLiMa Jan. 1, 2021 - Dec. 31, 2024

Involved external institutions

Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Rühl, M., Lehmeyer, J., Nagy, R., Weißer, M., Bockstedte, M., Krieger, M., & Weber, H.B. (2021). Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain. New Journal of Physics, 23. https://doi.org/10.1088/1367-2630/abfb3e

MLA:

Rühl, Maximilian, et al. "Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain." New Journal of Physics 23 (2021).

BibTeX: Download