X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals
Wicht T, Mueller S, Weingaertner R, Epelbaum B, Besendoerfer S, Blaess U, Weißer M, Unruh T, Meißner E (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 53
Pages Range: 1080-1086
DOI: 10.1107/S1600576720008961
Abstract
AlN slices from bulk crystals grown under low thermomechanical stress conditions via the physical vapor transport (PVT) method were analyzed by X-ray methods to study the influence of the growth mode on the crystal quality. Defect types and densities were analyzed along axial [000 (1) over bar] as well as lateral growth directions. X-ray diffraction (0 (1) over bar 10) rocking-curve mappings of representative wafer cuts reveal a low mean FWHM of 13.4 arcsec, indicating the generally high crystal quality. The total dislocation density of 2 x 10(3) cm(-2) as determined by X-ray topography is low and dislocations are largely threading edge dislocations of b = 1/3 < 11 (2) over bar0 > type. The absence of basal plane dislocations in homogeneous crystal regions void of macroscopic defects can be linked to the low-stress growth conditions. Under the investigated growth conditions this high crystal quality can be maintained both along the axial [000 (1) over bar] direction and within lateral growth directions. Exceptions to this are some locally confined, misoriented grains and defect clusters, most of which are directly inherited from the seed or are formed due to the employed seed fixation technique on the outer periphery of the crystals. Seed-shaping experiments indicate no apparent kinetic limitations for an enhanced lateral expansion rate and the resulting crystal quality, specifically with regard to the growth mode on a-face facets.
Authors with CRIS profile
Matthias Weißer
Lehrstuhl für Kristallographie und Strukturphysik
Tobias Unruh
Professur für Nanomaterialcharakterisierung (Streumethoden)
Elke Meißner
Lehrstuhl für Elektronische Bauelemente
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Wicht, T., Mueller, S., Weingaertner, R., Epelbaum, B., Besendoerfer, S., Blaess, U.,... Meißner, E. (2020). X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals. Journal of Applied Crystallography, 53, 1080-1086. https://doi.org/10.1107/S1600576720008961
MLA:
Wicht, Thomas, et al. "X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals." Journal of Applied Crystallography 53 (2020): 1080-1086.
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