Aguilar E, Issakov V, Weigel R (2020)
Publication Type: Journal article
Publication year: 2020
Book Volume: 67
Pages Range: 906-910
Article Number: 9052002
Journal Issue: 5
DOI: 10.1109/TCSII.2020.2984597
A 130 GHz fully-integrated fundamental-frequency transmitter (TX) module with 4.4 dBm single-ended measured output power in a 130 nm SiGe technology is presented. The transmitter achieves in measurement a phase noise of-88 dBc/Hz at 1 MHz offset frequency from a 130 GHz carrier and a tuning range of 17 GHz. Its relatively compact size, low power consumption and high output power, enables the TX module to be integrated into more complex D-Band transceiver modules for radar and imaging applications. Due to the available measurement equipment, it was only possible to measure the output power single-ended. The measured single-ended output power is 4.4 dBm. This corresponds well to a simulated maximum differential output power of 8.1 dBm. To the best of the author's knowledge, the presented chip exhibits one of the highest output power for fundamental-frequency TX modules among the recently reported state-of-The art chips in this frequency range.
APA:
Aguilar, E., Issakov, V., & Weigel, R. (2020). A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power. IEEE Transactions on Circuits and Systems II: Express Briefs, 67(5), 906-910. https://dx.doi.org/10.1109/TCSII.2020.2984597
MLA:
Aguilar, Erick, Vadim Issakov, and Robert Weigel. "A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power." IEEE Transactions on Circuits and Systems II: Express Briefs 67.5 (2020): 906-910.
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