Stark Tuning of the Silicon Vacancy in Silicon Carbide

Rühl M, Bergmann L, Krieger M, Weber HB (2020)

Publication Type: Journal article, Letter

Publication year: 2020


Book Volume: 20

Pages Range: 658-663

Journal Issue: 1


DOI: 10.1021/acs.nanolett.9b04419


We present a versatile scheme dedicated to exerting strong electric fields up to 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally strong electric fields can be selectively controlled. Investigating the silicon vacancy (V-Si) in ensemble photoluminescence experiments, we report Stark splitting of the V1' line of 3 meV by a basal electrical field and a Stark shift of the V1 line of 1 meV in an axial electric field. The spectral fine-tuning of the V-Si, being an important candidate for realizing quantum networks, paves the way for truly indistinguishable single-photon sources.

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Rühl, M., Bergmann, L., Krieger, M., & Weber, H.B. (2020). Stark Tuning of the Silicon Vacancy in Silicon Carbide. Nano Letters, 20(1), 658-663.


Rühl, Maximilian, et al. "Stark Tuning of the Silicon Vacancy in Silicon Carbide." Nano Letters 20.1 (2020): 658-663.

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