Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV

Grünler S, Rattmann G, Erlbacher T, Bauer AJ, Krach F, Frey L (2019)


Publication Type: Conference contribution

Publication year: 2019

Publisher: VDE Verlag GmbH

Conference Proceedings Title: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems

Event location: Nuremberg, DEU

ISBN: 9783800741717

Abstract

In this work, we report on the implementation of 3D silicon capacitors for the use in 50-100 V automotive applications as capacitive DC-DC converters operating in the MHz range. The fabrication process of the capacitors is based on the through-silicon-via technology and can be integrated into smart-power ICs and silicon interposers towards highly integrated power system-on-a-chip in the frame of an automotive qualified 350 nm Si-technology. High reliabilities and breakdown voltages up to 290 V (16 MV/cm) were achieved for present capacitors with a confined hole-patterns design. An integration density of 1.8 nF/mm2 was demonstrated for this approach. In addition, a detrimental wafer bow due to the mechanical stress of the thick dielectric layers can be considerably reduced by optimizing the design of the hole-patterns.

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APA:

Grünler, S., Rattmann, G., Erlbacher, T., Bauer, A.J., Krach, F., & Frey, L. (2019). Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV. In CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems. Nuremberg, DEU: VDE Verlag GmbH.

MLA:

Grünler, S., et al. "Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV." Proceedings of the 9th International Conference on Integrated Power Electronics Systems, CIPS 2016, Nuremberg, DEU VDE Verlag GmbH, 2019.

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