G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

Akhgar G, Ley L, Creedon DL, Stacey A, Mccallum JC, Hamilton AR, Pakes C (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Physical Review B American Physical Society

Book Volume: 99

Article Number: 035159

Journal Issue: 3

DOI: 10.1103/PhysRevB.99.035159

Abstract

The two-dimensional (2D) hole gas at the surface of transfer-doped diamond shows quantum-mechanical interference effects in magnetoresistance in the form of weak localization and weak antilocalization (WAL) at temperatures below about 5 K. Here we use the quenching of the WAL by an additional magnetic field applied parallel to the 2D plane to extract the magnitude of the in-plane g-factor of the holes and fluctuations in the well width as a function of carrier density. Carrier densities are varied between 1.71 and 4.35×1013cm-2 by gating a Hall bar device with an ionic liquid. Over this range, calculated values of |g| vary between 1.6 and 2.3 and the extracted well-width variation drops from 3 to 1.3 nm rms over the phase coherence length of 33 nm for a fixed geometrical surface roughness of about 1 nm as measured by atomic force microscopy. Possible mechanisms for the extracted variations in the presence of the ionic liquid are discussed.

Authors with CRIS profile

Lothar Ley Naturwissenschaftliche Fakultät

Additional Organisation(s)

Institut für Physik der Kondensierten Materie

Involved external institutions

The University of Melbourne AU Australia (AU) La Trobe University AU Australia (AU) University of New South Wales (UNSW) AU Australia (AU)

How to cite

APA:

Akhgar, G., Ley, L., Creedon, D.L., Stacey, A., Mccallum, J.C., Hamilton, A.R., & Pakes, C. (2019). G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond. Physical Review B, 99(3). https://doi.org/10.1103/PhysRevB.99.035159

MLA:

Akhgar, Golrokh, et al. "G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond." Physical Review B 99.3 (2019).

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