Growth of ordered anodic SnO2 nanochannel layers and their use for H2 gas sensing

Palacios-Padros A, Altomare M, Tighineanu A, Kirchgeorg R, Shrestha NK, Diez-Perez I, Caballero-Briones F, Sanz F, Schmuki P (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Book Volume: 2

Pages Range: 915-920

Journal Issue: 4

DOI: 10.1039/C3TA13704J

Abstract

In the current work, we present a new self-organizing anodization approach of metallic Sn layers to obtain vertically aligned tin oxide nanochannel structures. For this, we use a sulphide-containing electrolyte and a set of optimized anodizing parameters. The resulting high aspect ratio nanochannel morphologies can be converted into crystalline SnO2 by high temperature annealing and show highly promising H2 sensing properties. We show that these anodic layers can operate at relatively low temperatures (~80 °C), detecting concentrations as low as 9 ppm, and with extremely fast response and recovery times. This excellent gas-sensing performance is ascribed to the advanced structure, characterized by a crack-free, straight and top-open nanochannel geometry.

Authors with CRIS profile

Additional Organisation(s)

Involved external institutions

Center for Research and Advanced Studies of the National Polytechnic Institute / Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN) Mexico (MX) Universitat de Barcelona (UB) / University of Barcelona Spain (ES)

How to cite

APA:

Palacios-Padros, A., Altomare, M., Tighineanu, A., Kirchgeorg, R., Shrestha, N.K., Diez-Perez, I.,... Schmuki, P. (2014). Growth of ordered anodic SnO2 nanochannel layers and their use for H2 gas sensing. Journal of Materials Chemistry A, 2(4), 915-920. https://doi.org/10.1039/C3TA13704J

MLA:

Palacios-Padros, A., et al. "Growth of ordered anodic SnO2 nanochannel layers and their use for H2 gas sensing." Journal of Materials Chemistry A 2.4 (2014): 915-920.

BibTeX: Download