Roughness of silicon nanowire sidewalls and room temperature photoluminescence

Sivakov VA, Voigt F, Berger A, Bauer G, Christiansen SH (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Physical Review B American Physical Society

Book Volume: 82

Journal Issue: 12

DOI: 10.1103/PhysRevB.82.125446

Abstract

Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in silicon nanowires (SiNWs) that were realized by wet chemical etching of heavily (arsenic, As: 1020 cm$-$3) and lowly doped (boron, B: 1015 cm$-$3) single crystalline silicon (Si) wafers. Optical characterization of these SiNWs by PL combined with structural characterization by transmission and scanning electron microscopy strongly suggest that the visible PL at room temperature results from the rough SiNW sidewall structure that is composed of nanoscale features in which quantum confinement effects may occur.

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Leibniz-Institut für Photonische Technologien e.V. DE Germany (DE) Carl von Ossietzky Universität Oldenburg DE Germany (DE)

How to cite

APA:

Sivakov, V.A., Voigt, F., Berger, A., Bauer, G., & Christiansen, S.H. (2010). Roughness of silicon nanowire sidewalls and room temperature photoluminescence. Physical Review B, 82(12). https://doi.org/10.1103/PhysRevB.82.125446

MLA:

Sivakov, Vladimir A., et al. "Roughness of silicon nanowire sidewalls and room temperature photoluminescence." Physical Review B 82.12 (2010).

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