Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, Schuh P, Wellmann P, Herstrøm B, Jensen F, Ou H (2019)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2019
Book Volume: 91
Pages Range: 9-12
DOI: 10.1016/j.mssp.2018.10.028
We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30 mA.
APA:
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://doi.org/10.1016/j.mssp.2018.10.028
MLA:
Lin, Li, et al. "An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications." Materials Science in Semiconductor Processing 91 (2019): 9-12.
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