Acceptor-hydrogen interaction in ternary III-V semiconductors

Burchard A, Deicher M, Forkel-Wirth D, Freidinger J, Kerle T, Magerle R, Pfeiffer W, Prost W, Wellmann P, Winnacker A (1995)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1995

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 196-201

Pages Range: 987-991

DOI: 10.4028/www.scientific.net/MSF.196-201.987

Abstract

The formation of acceptor-hydrogen complexes has been studied in Cd doped ternary III-V compounds AlGaAs, InGaAs and GaInP. Using the perturbed gamma gamma angular correlation technique (PAC) with radioactive Cd-111m accepters, the interaction between the Cd accepters and H introduced by low energy implantation (100 eV) was examined quantitatively. The observed formation probability of Cd-H complexes and their hyperfine interaction parameters are compared with the ones observed for the binary compounds GaAs, AlAs, InAs, InP, and GaP.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Albrecht Winnacker Technische Fakultät

Involved external institutions

Universität Konstanz DE Germany (DE) Europäische Organisation für Kernforschung (CERN) CH Switzerland (CH) Universität Duisburg-Essen (UDE) DE Germany (DE) Julius-Maximilians-Universität Würzburg DE Germany (DE)

How to cite

APA:

Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,... Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://doi.org/10.4028/www.scientific.net/MSF.196-201.987

MLA:

Burchard, A., et al. "Acceptor-hydrogen interaction in ternary III-V semiconductors." Materials Science Forum 196-201 (1995): 987-991.

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