Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules
Arzig M, Salamon M, Uhlmann N, Johansen BA, Wellmann P (2018)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2018
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 924
Pages Range: 245-248
ISBN: 9783035711455
DOI: 10.4028/www.scientific.net/MSF.924.245
Abstract
Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.
Authors with CRIS profile
Matthias Arzig
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248. https://doi.org/10.4028/www.scientific.net/MSF.924.245
MLA:
Arzig, Matthias, et al. "Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules." Materials Science Forum 924 (2018): 245-248.
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