Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields
Krstic V, Obergfell D, Hansel S, Rikken GL, Blokland JH, Ferreira MS, Roth S (2008)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2008
Journal
Book Volume: 8
Pages Range: 1700-1703
Journal Issue: 6
DOI: 10.1021/nl080634k
Abstract
The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo−metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed. We argue that this plateau originates from an augmented sublattice spin-splitting due to the high surface-impurity concentration of the graphene layer. At electron densities close to the Dirac point, fingerprints of a thermally activated energy gap were observed.
Authors with CRIS profile
Involved external institutions
National Center for Scientific Research / Centre national de la recherche scientifique (CNRS)
France (FR)
Max-Planck-Institut für Festkörperforschung
Germany (DE)
Radboud University Nijmegen
Netherlands (NL)
Trinity College Dublin
Ireland (IE)
France (FR)
Max-Planck-Institut für Festkörperforschung
Germany (DE)
Radboud University Nijmegen
Netherlands (NL)
Trinity College Dublin
Ireland (IE)
How to cite
APA:
Krstic, V., Obergfell, D., Hansel, S., Rikken, G.L., Blokland, J.H., Ferreira, M.S., & Roth, S. (2008). Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields. Nano Letters, 8(6), 1700-1703. https://doi.org/10.1021/nl080634k
MLA:
Krstic, Vojislav, et al. "Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields." Nano Letters 8.6 (2008): 1700-1703.
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