High-voltage monolithic 3D capacitors based on through-silicon-via technology

Gruenler S, Rattmann G, Erlbacher T, Bauer AJ, Frey L (2015)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2015

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 253-255

Article Number: 7325655

ISBN: 9781467373562

DOI: 10.1109/IITC-MAM.2015.7325655

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Gruenler, S., Rattmann, G., Erlbacher, T., Bauer, A.J., & Frey, L. (2015). High-voltage monolithic 3D capacitors based on through-silicon-via technology. In Proceedings of the IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 (pp. 253-255). Institute of Electrical and Electronics Engineers Inc..

MLA:

Gruenler, Saeideh, et al. "High-voltage monolithic 3D capacitors based on through-silicon-via technology." Proceedings of the IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 Institute of Electrical and Electronics Engineers Inc., 2015. 253-255.

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