Experimental analysis of bipolar SiC-devices for future energy distribution systems
Hürner A, Mitlehner H, Erlbacher T, Bauer A, Frey L (2014)
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Article Number: 6910847
ISBN: 9781479930159
Abstract
In this study, the electrical performance of a bipolar switch (BiFET) fabricated on 4H-SiC proposed as solid state circuit breaker is discussed. Therefore, first results on the output and blocking characteristic are presented and analyzed. The bipolar switch indicates a current limiting output characteristic and robust behavior in off-state mode. Nevertheless, further improvement of the conduction properties by increasing the doping concentration in the p-type channel region has to be carried out. Furthermore, it is determined that for a clear understanding of the temperature dependency of the output characteristic, further investigations concerning the influence of the incomplete ionization, ambipolar lifetime, and emitter efficiency are mandatory.
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Germany (DE)How to cite
APA:
Hürner, A., Mitlehner, H., Erlbacher, T., Bauer, A., & Frey, L. (2014). Experimental analysis of bipolar SiC-devices for future energy distribution systems. In Proceedings of the 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014. Institute of Electrical and Electronics Engineers Inc..
MLA:
Hürner, Andreas, et al. "Experimental analysis of bipolar SiC-devices for future energy distribution systems." Proceedings of the 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 Institute of Electrical and Electronics Engineers Inc., 2014.
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