Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

Meingast A, Quezada AN, Devillers T, Kovacs A, Albu M, Fladischer S, Bonanni A, Kothleitner G (2015)

Publication Status: Published

Publication Type: Journal article

Publication year: 2015

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 30

Journal Issue: 3

DOI: 10.1088/0268-1242/30/3/035002

Abstract

Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn) N; (ii) delta-Mn-doped (Ga, delta-Mn) N and phase separated (Ga, Fe) N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.

Authors with CRIS profile

Stefanie Rechberger Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE) Technische Universität Graz AT Austria (AT) Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Meingast, A., Quezada, A.N., Devillers, T., Kovacs, A., Albu, M., Fladischer, S.,... Kothleitner, G. (2015). Analytical electron microscopy study on gallium nitride systems doped with manganese and iron. Semiconductor Science and Technology, 30(3). https://doi.org/10.1088/0268-1242/30/3/035002

MLA:

Meingast, Arno, et al. "Analytical electron microscopy study on gallium nitride systems doped with manganese and iron." Semiconductor Science and Technology 30.3 (2015).

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