Graphene growth by metal etching on Ru(0001)

Starodub E, Maier S, Stass I, Bartelt NC, Feibelman PJ, Salmeron M, McCarty K (2009)

Publication Status: Published

Publication Type: Journal article

Publication year: 2009



Book Volume: 80

Journal Issue: 23

DOI: 10.1103/PhysRevB.80.235422


Low-energy electron microscopy reveals a mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density-functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.

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How to cite


Starodub, E., Maier, S., Stass, I., Bartelt, N.C., Feibelman, P.J., Salmeron, M., & McCarty, K. (2009). Graphene growth by metal etching on Ru(0001). Physical Review B, 80(23).


Starodub, Elena, et al. "Graphene growth by metal etching on Ru(0001)." Physical Review B 80.23 (2009).

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