Heckel T, Frey L (2015)
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 141-146
Article Number: 7369263
ISBN: 9781467378857
DOI: 10.1109/WiPDA.2015.7369263
Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.
APA:
Heckel, T., & Frey, L. (2015). A Novel Charge Based SPICE Model for Nonlinear Device Capacitances. In Proceedings of the 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 (pp. 141-146). Institute of Electrical and Electronics Engineers Inc..
MLA:
Heckel, Thomas, and Lothar Frey. "A Novel Charge Based SPICE Model for Nonlinear Device Capacitances." Proceedings of the 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 Institute of Electrical and Electronics Engineers Inc., 2015. 141-146.
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