Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability

Krach F, Thielen N, Heckel T, Bauer A, Erlbacher T, Frey L, Heckel T (2016)

Publication Language: English

Publication Status: Published

Publication Type: Other publication type, conference paper

Publication year: 2016

Publisher: Device Research Conference (DRC), 2016 74th Annual

Article Number: 7548452

ISBN: 978-150902827-6

DOI: 10.1109/DRC.2016.7548452

Abstract

Passive snubber networks are especially needed in fast switching power modules to prevent overvoltage from hard switching and to minimize electromagnetic interference [1]. In a half-bridge circuit as shown in Fig. 1 (a) dissipative RC snubber networks are beneficial over single pulse capacitors as they do not generate a resonant pole in the impedance spectrum, which can be seen in Fig. 1 (b). As only a small capacitance (e.g. 4 nF) is needed to reduce the overvoltage (Fig. 1 (c)), a monolithically integrated RC snubber can be realized on a silicon chip and packaged directly on the power module substrate. An improved module performance was already demonstrated for chip snubbers with 200 V operating voltage [2]. This work shows how the device design was enhanced for high manufacturability and reliable operations in a voltage range from 600 V to 900 V.

Authors with CRIS profile

Florian Krach Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente Thomas Heckel Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Krach, F., Thielen, N., Heckel, T., Bauer, A., Erlbacher, T., Frey, L., & Heckel, T. (2016). Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability. Device Research Conference (DRC), 2016 74th Annual.

MLA:

Krach, Florian, et al. Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability. Device Research Conference (DRC), 2016 74th Annual, 2016.

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