Kolesnik-Gray M, Lutz T, Collins G, Biswas S, Holmes JD, Krstic V (2013)
Publication Language: English
Publication Type: Journal article, Letter
Publication year: 2013
Publisher: American Institute of Physics (AIP)
Book Volume: 103
Article Number: 153101
URI: http://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996
DOI: 10.1063/1.4821996
Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be gamma = 0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.
APA:
Kolesnik-Gray, M., Lutz, T., Collins, G., Biswas, S., Holmes, J.D., & Krstic, V. (2013). Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103. https://doi.org/10.1063/1.4821996
MLA:
Kolesnik-Gray, Maria, et al. "Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires." Applied Physics Letters 103 (2013).
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