High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

Nugraha MI, Häusermann R, Bisri SZ, Matsui H, Sytnyk M, Heiß W, Takeya J, Loi MA (2015)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Advanced Materials Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 27

Pages Range: 2107-2112

Journal Issue: 12

DOI: 10.1002/adma.201404495

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm V s) and the high on/off ratio (10-10), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Authors with CRIS profile

Wolfgang Heiß Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)

Additional Organisation(s)

Energie-Campus Nürnberg (EnCN)

Involved external institutions

University of Groningen / Rijksuniversiteit Groningen NL Netherlands (NL) University of Tokyo JP Japan (JP) Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Nugraha, M.I., Häusermann, R., Bisri, S.Z., Matsui, H., Sytnyk, M., Heiß, W.,... Loi, M.A. (2015). High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors. Advanced Materials, 27(12), 2107-2112. https://doi.org/10.1002/adma.201404495

MLA:

Nugraha, Mohamad Insan, et al. "High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors." Advanced Materials 27.12 (2015): 2107-2112.

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