Quasi-freestanding Graphene on SiC(0001)

Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber HB, Seyller T (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 645-648

Pages Range: 629-632

DOI: 10.4028/www.scientific.net/MSF.645-648.629

Abstract

We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm²/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy. © (2010) Trans Tech Publications.

Authors with CRIS profile

Florian Speck Naturwissenschaftliche Fakultät Markus Ostler Lehrstuhl für Laserphysik Johannes Jobst Chair of Applied Physics (LAP) Daniel Waldmann Chair of Applied Physics (LAP) Martin Hundhausen Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät Heiko Weber Chair of Applied Physics (LAP) Thomas Seyller Lehrstuhl für Laserphysik

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

How to cite

APA:

Speck, F., Ostler, M., Röhrl, J., Jobst, J., Waldmann, D., Hundhausen, M.,... Seyller, T. (2010). Quasi-freestanding Graphene on SiC(0001). Materials Science Forum, 645-648, 629-632. https://doi.org/10.4028/www.scientific.net/MSF.645-648.629

MLA:

Speck, Florian, et al. "Quasi-freestanding Graphene on SiC(0001)." Materials Science Forum 645-648 (2010): 629-632.

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