Quasi-freestanding Graphene on SiC(0001)

Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber HB, Seyller T (2010)

Publication Type: Journal article

Publication year: 2010


Publisher: Trans Tech Publications

Book Volume: 645-648

Pages Range: 629-632

DOI: 10.4028/www.scientific.net/MSF.645-648.629


We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy. © (2010) Trans Tech Publications.

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Speck, F., Ostler, M., Röhrl, J., Jobst, J., Waldmann, D., Hundhausen, M.,... Seyller, T. (2010). Quasi-freestanding Graphene on SiC(0001). Materials Science Forum, 645-648, 629-632. https://doi.org/10.4028/www.scientific.net/MSF.645-648.629


Speck, Florian, et al. "Quasi-freestanding Graphene on SiC(0001)." Materials Science Forum 645-648 (2010): 629-632.

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