Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen

Ley L, Hundhausen M (2002)


Publication Type: Journal article

Publication year: 2002

Journal

Publisher: American Physical Society

Book Volume: 66

Pages Range: 035204-1

Abstract

Samples of 6H-SiC have been electron-irradiated with electron energies in the range 100-300 keV in a transmission electron microscope. After irradiation the samples were transferred to microscopic low-temperature photoluminescence spectrometers and excited by 325-nm, 488-nm, and 514.5-nm lasers. Optical centers were observed that had high-energy local modes and, when samples that had been enriched with 13C during growth were examined, these local modes were split into triplets. The observations are interpreted as C-C dumb bells created from C interstitials generated during the irradiation process. This is the reported identification of self-interstitial atoms by photoluminescence in SiC.

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How to cite

APA:

Ley, L., & Hundhausen, M. (2002). Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen. Physical Review B, 66, 035204-1.

MLA:

Ley, Lothar, and Martin Hundhausen. "Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen." Physical Review B 66 (2002): 035204-1.

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