Azimi H, Morana M, Ameri T, Dastmalchi B, Scharber M, Hingerl K, Brabec C (2011)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Book Volume: 95
Pages Range: 3093-3098
Journal Issue: 11
DOI: 10.1016/j.solmat.2011.06.041
With the aid of optical modeling, the internal quantum efficiencies of organic Bulk Heterojunction (oBHJ) photovoltaic devices based on low band gap polymer of poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d] silole)-2,6-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5, 5′-diyl] (Si-PCPDTBT) blended with the acceptors of 1-(3-Methoxycarbonyl) propyl-1-phenyl [6,6] C61 (PCBM) and bisadduct (bisPCBM) are determined. The Si-PCPDTBT:bisPCBM devices show considerably lower short circuit current density (J) as compared to the Si-PCPDTBT:PCBM devices. The results show that 30% of this smaller J is due to the lower optical absorption of bisPCBM, while the major losses originate from the electrical losses. It is found that for the best Si-PCPDTBT:bisPCBM devices with an active layer thickness in the range of 70100 nm, the inefficient charge generation within the bisPCBM domains is the major contribution to the whole losses. Increasing the active layer thickness of Si-PCPDTBT:bisPCBM device significantly enhances recombination losses in polymer/bisfullerene matrix. © 2011 Elsevier B.V. All rights reserved.
APA:
Azimi, H., Morana, M., Ameri, T., Dastmalchi, B., Scharber, M., Hingerl, K., & Brabec, C. (2011). Determining the internal quantum efficiency of organic Bulk Heterojunctions based on mono and bisadduct fullerenes as acceptor. Solar Energy Materials and Solar Cells, 95(11), 3093-3098. https://doi.org/10.1016/j.solmat.2011.06.041
MLA:
Azimi, Hamed, et al. "Determining the internal quantum efficiency of organic Bulk Heterojunctions based on mono and bisadduct fullerenes as acceptor." Solar Energy Materials and Solar Cells 95.11 (2011): 3093-3098.
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