Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures

Ristein J, Ley L (1998)

Publication Type: Journal article

Publication year: 1998

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 264-268

Pages Range: 825

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Ristein, J., & Ley, L. (1998). Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures. Materials Science Forum, 264-268, 825.

MLA:

Ristein, Jürgen, and Lothar Ley. "Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures." Materials Science Forum 264-268 (1998): 825.

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