Characterization of charging damage in plasma doping

Henke D, Walther S, Weemann J, Dirnecker T, Ruf A, Beyer A, Lee K (2003)

Publication Type: Conference contribution

Publication year: 2003

Publisher: IEEE

City/Town: Piscataway

Pages Range: 201-204

Conference Proceedings Title: IEEE Proc. on Ion Implantation TEchnology-2002

Event location: Taos, New Mexico, USA

DOI: 10.1109/IIT.2002.1257973

Authors with CRIS profile

Sabine Walther Lehrstuhl für Elektronische Bauelemente Tobias Dirnecker Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Infineon Technologies Dresden GmbH & Co. KG DE Germany (DE)

How to cite

APA:

Henke, D., Walther, S., Weemann, J., Dirnecker, T., Ruf, A., Beyer, A., & Lee, K. (2003). Characterization of charging damage in plasma doping. In IEEE Proc. on Ion Implantation TEchnology-2002 (pp. 201-204). Taos, New Mexico, USA: Piscataway: IEEE.

MLA:

Henke, D., et al. "Characterization of charging damage in plasma doping." Proceedings of the Ion Implantation Technology, Taos, New Mexico, USA Piscataway: IEEE, 2003. 201-204.

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