Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Hundhausen M, Ley L (2002)

Publication Type: Journal article

Publication year: 2002

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 389-393

Pages Range: 625

Abstract

The phonon frequencies of silicon carbide (SiC) depend on the atomic masses of the constituent elements Si and C. In general, the frequency decreases, when the mass of one kind of atom is increased by isotopic substitution. Quantitatively, the shift of a phonon line in the Raman spectrum due to such a substitution depends on the phonon eigenvector of the isotopically modified constituent atom. We measure the frequency shifts for Raman active modes in SiC polytypes, when the ¹²C-isotope is replaced by ¹³C and calculate the absolute value of the eigenvector of the carbon sublattice from these results. With these results a validation and improvement of the force constants used in a linear-chain model to calculate phonon dispersion curves is possible. © 2002 Trans Tech Publications.

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Hundhausen, M., & Ley, L. (2002). Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy. Materials Science Forum, 389-393, 625.

MLA:

Hundhausen, Martin, and Lothar Ley. "Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy." Materials Science Forum 389-393 (2002): 625.

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