Gated Epitaxial Graphene Devices

Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 717-720

Pages Range: 675-678

URI: http://www.scientific.net/MSF.717-720.675

DOI: 10.4028/www.scientific.net/MSF.717-720.675

Abstract

A bottom gate scheme is presented to tune the charge density of epitaxial graphene via a gate voltage while leaving the surface open for further manipulation or investigation. Depending on the doping concentration of the buried gate layer, the temperature and illumination, the bottom gate structure can be operated in two regimes with distinct capacitances. A model is proposed, which quantitatively describes the gate operation. The model is verified by a control experiment with an illuminated gate structure using UV light. Using UV illumination the Schottky capacitor (SC) regime, which provides improved gate efficiency, can be used even at low temperatures. © (2012) Trans Tech Publications.

Authors with CRIS profile

Daniel Waldmann Chair of Applied Physics (LAP) Johannes Jobst Chair of Applied Physics (LAP) Florian Speck Lehrstuhl für Laserphysik Thomas Seyller Lehrstuhl für Laserphysik Michael Krieger Chair of Applied Physics (LAP) Heiko Weber Chair of Applied Physics (LAP)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

How to cite

APA:

Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Gated Epitaxial Graphene Devices. Materials Science Forum, 717-720, 675-678. https://doi.org/10.4028/www.scientific.net/MSF.717-720.675

MLA:

Waldmann, Daniel, et al. "Gated Epitaxial Graphene Devices." Materials Science Forum 717-720 (2012): 675-678.

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