Structural defects in SiC crystals investigated by high energy x-ray diffraction
Weißer M, Seitz C, Wellmann P, Hock R, Magerl A (2004)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2004
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 457-460
Pages Range: 339-342
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Event location: Lyon
DOI: 10.4028/www.scientific.net/MSF.457-460.339
Abstract
High energy x-ray diffraction (up to 300 keV) has been used to analyse structural defects in an as grown SiC boule with a diameter of 55 nun, a thickness of 20 mm and in a 2 inch wafer. The crystals are 6H SiC grown by PVT method. In the wafer numerous grains can be identified and localised with a mosaicity in the order of 0.05degrees, whereas the whole wafer shows a mosaic spread of around 0.1degrees. The bulk crystal shows a pronounced domain structure and a bending in the lattice plane orientation. The local reflection broadening is between 0.2degrees and 2degrees, while the tilts of the lattice planes over the entire wafer are between 2 and 6degrees (2theta-values).
Authors with CRIS profile
Matthias Weißer
Lehrstuhl für Kristallographie und Strukturphysik (ICSP)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Rainer Hock
Professur für Kristallographie und Strukturphysik
Andreas Magerl
Lehrstuhl für Kristallographie und Strukturphysik (ICSP)
How to cite
APA:
Weißer, M., Seitz, C., Wellmann, P., Hock, R., & Magerl, A. (2004). Structural defects in SiC crystals investigated by high energy x-ray diffraction. Materials Science Forum, 457-460, 339-342. https://doi.org/10.4028/www.scientific.net/MSF.457-460.339
MLA:
Weißer, Matthias, et al. "Structural defects in SiC crystals investigated by high energy x-ray diffraction." Materials Science Forum 457-460 (2004): 339-342.
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